Low voltage semiconductor memory device

Details Low voltage semiconductor memory device Low voltage semiconductor memory device

2005-05-18

2008-08-26

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S189090, C365S189110, C365S207000

Reexamination Certificate

active

07417910

ABSTRACT:
A semiconductor memory device having a cell array area for reading or storing data, including: a normal cell block including a plurality of normal cells, each being coupled to one of a bit line and a bit line bar for storing a data; a reference cell block including a plurality of reference cell units, each including a reference capacitor, a first reference metal oxide semiconductor (MOS) transistor for connecting the reference capacitor to the bit line, and a second reference MOS transistor for connecting the reference capacitor to the bit line bar; and a third reference MOS transistor coupled to the reference cell block for charging the reference capacitor with a reference voltage.

REFERENCES:
patent: 5235550 (1993-08-01), Zagar
patent: 5424977 (1995-06-01), Rountree
patent: 5592428 (1997-01-01), Harrand et al.
patent: 6078538 (2000-06-01), Ma et al.
patent: 6570799 (2003-05-01), Parris
patent: 6678199 (2004-01-01), Joo
patent: 6950353 (2005-09-01), Kim et al.
patent: 7126867 (2006-10-01), Kang et al.
patent: 2002/0054503 (2002-05-01), Lee
patent: 2003/0151943 (2003-08-01), Sadakata
patent: 2003/0202391 (2003-10-01), Nishimura et al.
patent: 2004/0090814 (2004-05-01), Takahashi
patent: 2005/0018470 (2005-01-01), Jung
patent: 2005/0122765 (2005-06-01), Allen et al.
patent: 2005/0128782 (2005-06-01), Jeon
patent: 2006/0092738 (2006-05-01), Kang et al.
patent: 2006/0133131 (2006-06-01), Kang et al.
patent: 2006/0133132 (2006-06-01), Kang et al.
patent: 2004-22073 (2004-01-01), None
patent: 2000-0027912 (2000-05-01), None

Affiliated with

Also associated with

Rating

Low voltage semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4004904