Low voltage non-volatile memory transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S413000, C257S529000, C257S757000, C257S904000, C438S132000, C438S281000, C438S467000, C365S096000, C365S104000, C365S177000

Reexamination Certificate

active

07026692

ABSTRACT:
A p-channel non-volatile memory (NVM) transistor is programmed by shifting the threshold voltage of the transistor. The threshold voltage is shifted by introducing a programming current to the gate electrode of the transistor, and simultaneously introducing a negative bias to the transistor. The threshold voltage of the p-channel NVM transistor is shifted in response to the negative bias condition and the heat generated by the programming current. The high temperature accelerates the threshold voltage shift. The threshold voltage shift is accompanied by an agglomeration of material in the gate electrode. The agglomeration of material in the gate electrode is an indication of the high temperature reached during programming. The threshold voltage shift of the p-channel NVM transistor is permanent.

REFERENCES:
patent: 4219836 (1980-08-01), McElroy
patent: 4238839 (1980-12-01), Redfern et al.
patent: 4647340 (1987-03-01), Szluk et al.
patent: 4872140 (1989-10-01), Graham et al.
patent: 6258700 (2001-07-01), Bohr et al.
patent: 6496416 (2002-12-01), Look
patent: 6522582 (2003-02-01), Rao et al.
patent: 6525397 (2003-02-01), Kalnitsky et al.
patent: 6703680 (2004-03-01), Toyoshima
patent: 6807079 (2004-10-01), Mei et al.
patent: 6911360 (2005-06-01), Li et al.
patent: 2003/0122200 (2003-07-01), Kamiya et al.
patent: 2004/0124458 (2004-07-01), Kothandaraman
patent: 2005/0067670 (2005-03-01), Hui
U.S. Appl. No. 10/283,736, filed Oct. 29, 2002, Look.
U.S. Appl. No. 10/693,467, filed Oct. 24, 2003, Look.
U.S. Appl. No. 10/693,468, filed Oct. 24, 2003, Look.
U.S. Appl. No. 10/693,219, filed Oct. 24, 2003, Look.
Toyoji Yamamoto et al., “Bias Temperature Instability in Scaled p+ Polysilicon Gate p-MOSFET's,” IEEE Transactions on Electron Devices, vol. 46, No. 5, May 1999, IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
N. Kimizuka et al., “NBTI enchancement by nitrogen incorporation into ultrathin gat oxide for 0.10-um gate CMOS generation,” 2000 Symposium on VLSI Technology Digest of Technical Papers, Apr. 2000, pp. 92-93, IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
Jerome B. Lasky et al., “Comparison of Transformation to Low-Resistivity Phase and Agglomeration of TiSi2and CoSi2,” IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 262-269, IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
Se-Aug Jang et al., “Effects of Thermal Processes After Silicidation on the Performance of TiSi2/ Polysilicon Gate Device,” IEEE Transactions on Electron Devices, vol. 46, No. 12, Dec. 1999, pp. 2353-2356, IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
Mohsen Alavi et al., A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process, Jul. 1997, pp. 855-858, IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.
Alexander Kalnitzky et al., CoSi2integrated fuses on poly silicon for low voltage 0.18um CMOS applications, Sep. 1999, pp. 765-768 IEEE, 3 Park Avenue, 17th Floor, New York, NY 10016-5997.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low voltage non-volatile memory transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage non-volatile memory transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage non-volatile memory transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3536559

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.