Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-10
2007-04-10
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S207000, C438S211000, C438S219000, C438S248000
Reexamination Certificate
active
11021693
ABSTRACT:
A method of making a memory array and peripheral circuits together on a single substrate forms a dielectric layer, floating gate layer, inter-layer dielectric and mask layer across all regions of the substrate. Subsequently these layers are removed from the peripheral regions and dielectrics of different thicknesses are formed in the peripheral regions according to the voltages of the circuits in these regions. A conductive layer is formed over the memory array and the peripheral circuits to form control gates in the memory array and form gate electrodes in the peripheral regions.
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Higashitani Masaaki
Pham Tuan
Lee Hsien-Ming
Parsons Hsue & de Runtz LLP
SanDisk Corporation
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