Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-11
2000-09-05
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257342, 257343, 257401, H01L 2976
Patent
active
061147265
ABSTRACT:
A low voltage planar MOSFET has a polyline width of less than 3.8 microns and a channel (base) region depth of less than 1.5 microns to produce a device having a reduced figure of merit (or product of Q.sub.GD and R.sub.DSON).
REFERENCES:
patent: 4268951 (1981-05-01), Elliott et al.
patent: 4857986 (1989-08-01), Kinugawa
patent: 4883767 (1989-11-01), Gray et al.
patent: 5179032 (1993-01-01), Quigg
patent: 5285094 (1994-02-01), Mori et al.
patent: 5304831 (1994-04-01), Yilmaz et al.
patent: 5429956 (1995-07-01), Shell et al.
patent: 5429964 (1995-07-01), Yilmaz et al.
patent: 5436481 (1995-07-01), Egawa
patent: 5460985 (1995-10-01), Tokura et al.
patent: 5494843 (1996-02-01), Huang
patent: 5677218 (1997-10-01), Tseng
1 micron Micron VLSI Technologypart II-Device Designs and Characteristics for High Performance Logic Applications, IEEE Journal of Solid-State Circuits, vol. Sc- 14, No. 2, Apr. 1979.
1 .mu.m MOSFET VLSI Technology: Part II-Device Designs and Characteristics for High-Performance Logic Applications, IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2 (Apr. 1979).
International Rectifier Corp.
Jr. Carl Whitehead
Warren Matthew E.
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