Low voltage, low power static random access memory cell

Details Low voltage, low power static random access memory cell Low voltage, low power static random access memory cell

1998-03-25

2000-07-18

Nelms, David

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100

Patent

active

060916265

ABSTRACT:
A ten transistor low voltage, low power static random access memory cell (10) includes a first inverter (12) cross-coupled to a second inverter (18). A series combination of a first pass transistor (24) and a first bitline select transistor (28) is connected between an output node (13) of the first inverter (12) and a first bitline (36). A first write pass transistor (32) is placed in parallel with the first pass transistor (24). A series combination of a second pass transistor (26) and a second bitline select transistor (30) is connected between an output node (17) of the second inverter (18) and a second bitline (38). A second write pass transistor (34) is placed in parallel with the second pass transistor (26).

REFERENCES:
patent: 5469380 (1995-11-01), Lio
patent: 5710742 (1998-01-01), Carter et al.
patent: 5828610 (1998-10-01), Rogers et al.

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