Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-20
2005-09-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S275000
Reexamination Certificate
active
06946353
ABSTRACT:
A method for adjusting Vtwhile minimizing parasitic capacitance for low voltage high speed semiconductor devices. The method uses shadow effects and an angled punch through prevention implant between vertical structures to provide a graded implant. The implant angle is greater than or equal to arc tangent of S/H where S is the horizontal distance between, and H is the height of, such vertical structures.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Lebentritt Michael
Lindsay Jr. Walter L.
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