Low voltage electro-static discharge protective device and metho

Details Low voltage electro-static discharge protective device and metho Low voltage electro-static discharge protective device and metho

1997-07-14

1999-03-23

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438281, 438947, H01L 21336

Patent

active

058858750

ABSTRACT:
A low voltage electro-static discharge protective device includes a field oxide layer on a substrate, source/drain regions beside the field oxide layer in the substrate, and a threshold voltage adjustment region under the field oxide layer. The fabricating of the protective device includes forming a pad oxide layer and a silicon nitride layer on a substrate, etching the silicon nitride layer to form an opening, forming a oxide spacer on the exposed portion of the pad oxide layer around the periphery of the opening, implanting ions into the substrate, forming a field oxide layer in the opening, so that the certain type of ions form a threshold voltage adjustment region under the field oxide layer, removing the silicon nitride layer, removing the exposed pad oxide layer, and forming source/drain regions beside the field oxide layer.

REFERENCES:
patent: 5489792 (1996-02-01), Hu et al.
patent: 5610089 (1997-03-01), Iwai et al.
patent: 5679602 (1997-10-01), Lin et al.

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