Low voltage CMOS structure with dynamic threshold voltage

Details Low voltage CMOS structure with dynamic threshold voltage Low voltage CMOS structure with dynamic threshold voltage

2006-11-28

2006-11-28

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07141470

ABSTRACT:
A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is complimentary to the semiconductor material type of a well thereof, so as to define a diode. The diode is at least partially turned on, so as to increase the potential of a substrate of the complimentary metal oxide semiconductor and thus reduce the turn-on threshold voltage thereof. The turn-off threshold voltage is approximately unchanged.

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