Low thermal budget fabrication method for a mask read only...

Details Low thermal budget fabrication method for a mask read only... Low thermal budget fabrication method for a mask read only...

2002-05-24

2008-10-28

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S278000

Reexamination Certificate

active

07442610

ABSTRACT:
A low thermal budget fabrication method for a mask ROM is described. The method includes providing a substrate having a gate oxide layer thereon. A first conductive layer is formed on the gate oxide layer. A plurality of bit lines is formed in the substrate. A second conductive layer is then formed on the first conductive layer, followed by forming a plurality of ROM codes in the substrate.

REFERENCES:
patent: 5523251 (1996-06-01), Hong
patent: 5672532 (1997-09-01), Hsue et al.
patent: 5854109 (1998-12-01), Sheng et al.
patent: 5977601 (1999-11-01), Yang et al.
patent: 6187638 (2001-02-01), Wen

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