Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-12-19
1999-04-27
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438692, 438695, 438748, 438750, 216 92, 216106, H01L 21306, H01L 21304, H01L 21308, B44C 122
Patent
active
058973796
ABSTRACT:
A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.
REFERENCES:
patent: 3951710 (1976-04-01), Basi
patent: 4906328 (1990-03-01), Freeeman et al.
patent: 5261965 (1993-11-01), Moslehi
patent: 5269878 (1993-12-01), Page et al.
patent: 5362350 (1994-11-01), Yanagida
patent: 5431774 (1995-07-01), Douglas
patent: 5486234 (1996-01-01), Contolini et al.
patent: 5736002 (1998-04-01), Allen et al.
patent: 5739067 (1998-04-01), DeBusk et al.
Ivankovits, J.C. et al., "Chemical Vapor Cleaning for the Removal of Metallic Contamination from Wafer Surfaces Using 1, 1, 1,5,5,5,-hexafluoro-2,4-pentanedione", Proceedings of the Electrochemical Society, 92-12, pp. 105-111, 1992.
Riley, D.J., "The Impact of Temperature and Concentration on SC2 Cost and Performance in a Producion Environment", Material Research Society Symposium Proceedings, 477, pp. 519-526, 1997.
Kobayashi Masato
Nguyen Tue
Ulrich Bruce Dale
Champagne Donald L.
Maliszewski Gerald
Ripma David C.
Sharp Kabushiki Kaisha
Sharp Microelectronics Technology Inc.
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