Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-28
2005-06-28
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S785000
Reexamination Certificate
active
06911361
ABSTRACT:
A method of applying a PCMO thin film on an iridium substrate for use in a RRAM device, includes preparing a substrate; depositing a barrier layer on the substrate; depositing a layer of iridium on the barrier layer; spin coating a layer of PCMO on the iridium; baking the PCMO and substrate in a three-step baking process; post-bake annealing the substrate and the PCMO in a RTP chamber; repeating said spin coating, baking and annealing steps until the PCMO has a desired thickness; annealing the substrate and PCMO; depositing a top electrode; and completing the RRAM device.
REFERENCES:
patent: 6664117 (2003-12-01), Zhuang et al.
patent: 6759249 (2004-07-01), Zhuang et al.
patent: 6774054 (2004-08-01), Zhang et al.
patent: 2004/0160819 (2004-08-01), Rinerson et al.
U.S. Appl. No. 10/759,468.
Hsu Sheng Teng
Pan Wei
Zhang Fengyan
Zhuang Wei-Wei
Curtin Joseph P.
Kielin Erik
Ripma David C.
Sharp Laboratories of America Inc.
LandOfFree
Low temperature processing of PCMO thin film on Ir substrate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low temperature processing of PCMO thin film on Ir substrate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature processing of PCMO thin film on Ir substrate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3494728