Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-06-10
2008-09-09
Chen, Bret (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S578000, C427S579000, C427S551000
Reexamination Certificate
active
07422776
ABSTRACT:
Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.
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Demos et al., “A Thermally Stable, k<2.5 Carbon-Doped Oxide Film Deposited by a Plasma-Enhance CVD Process,” Microsoft Power Point presentation, Applied Materials, Santa Clara, CA, USA, May 11, 2004, 21 pages total.
Dixit et al., “Film Properties and Integration Performance of a Nano-Porous Carbon Doped Oxide,” Microsoft Power Point presentation, Applied Materials, Santa Clara, CA, USA, May 11, 2004, 22 pages total.
Huang Lihua Li
Schmitt Francimar
Xia Li-Qun
Yim Kang Sub
Applied Materials Inc.
Chen Bret
Townsend and Townsend and Crew
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