Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2011-06-28
2011-06-28
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S082000, C438S099000, C438S301000, C438S302000, C438S303000, C257SE21218, C257SE21041, C257SE21049
Reexamination Certificate
active
07968473
ABSTRACT:
A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
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Bencher Christopher Dennis
Kanuri Rajesh
Menezes Marlon E.
Parihar Vijay
Applied Materials Inc.
Richards N Drew
Singal Ankush k
Wallace Robert M.
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