Low temperature process and structures for polycide power...

Details Low temperature process and structures for polycide power... Low temperature process and structures for polycide power...

2007-05-15

2007-05-15

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S342000, C257S401000

Reexamination Certificate

active

11053617

ABSTRACT:
A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.

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