Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-04
2005-10-04
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S344000, C257S366000, C257S408000, C438S291000, C438S299000, C438S302000, C438S303000
Reexamination Certificate
active
06951793
ABSTRACT:
A low-temperature polysilicon thin film transistor having a buried LDD structure is provided. Two heavily doped regions are formed in a semiconductor layer and distributed just below a surface of the semiconductor layer. Two LDD regions are both sandwiched between the two heavily doped regions in a direction substantially parallel to the surface of semiconductor layer, and separated from the surface of the semiconductor layer by a portion of the semiconductor layer. The process for producing such a thin film transistor is also provided. A first, a second and a third doping materials are injected into a semiconductor layer in different directions to form heavily doped regions and LDD regions.
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Nelms David
Nguyen Dao H.
Toppoly Optoelectronics Corp.
Volpe and Koenig P.C.
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