Low-temperature plasma processor

Details Low-temperature plasma processor Low-temperature plasma processor

1990-07-24

1992-01-07

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429831, 20429838, 156345, C23F 102

Patent

active

050788515

ABSTRACT:
The present invention relates to a plasma processor in which a sample such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator is interposed between a sample holder for arranging the sample thereon and a cooling container for cooling the sample holder, so as to electrically insulate them, whereby a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator is held in close contact with the sample holder and the cooling container through members of a thermal conductor, whereby the occurrence of non-uniformity during the processing of the sample and the occurrence of a dispersion in the qualities of processed samples among sample lots or among processors can be suppressed.

REFERENCES:
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4434042 (1984-02-01), Keith
patent: 4448652 (1984-05-01), Pachonik
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4771730 (1988-09-01), Tezuka
patent: 4832781 (1989-05-01), Mears
patent: 4844767 (1989-07-01), Okudaira et al.
patent: 4897171 (1990-01-01), Ohmi
patent: 4911812 (1990-03-01), Kudo et al.
patent: 4956043 (1990-09-01), Kanetomo et al.

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