Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-10-31
2006-10-31
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S771000, C438S772000, C438S774000, C438S775000, C438S776000, C438S777000, C438S778000, C438S779000, C438S780000, C438S786000, C438S791000, C438S792000, C438S793000, C438S794000
Reexamination Certificate
active
07129187
ABSTRACT:
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film.
REFERENCES:
patent: 4863755 (1989-09-01), Hess et al.
patent: 6790788 (2004-09-01), Li et al.
patent: 6890869 (2005-05-01), Chung
patent: 2003/0162412 (2003-08-01), Chung
patent: 2004/0253777 (2004-12-01), Miyoshi et al.
patent: 1638139 (2004-11-01), None
patent: WO9418355 (1994-08-01), None
patent: WO9515571 (1995-06-01), None
patent: WO9527292 (1995-10-01), None
patent: WO9527293 (2006-05-01), None
Gerstenberg et al.,Gas Evolution Studies for Structural Characterization of Hexamethyldisilazane-based α-Si:C:N:H Films, J. Appl. Phys. 62(5), Sep. 1, 1987, pp. 1782-1787.
J. Tyczkowski et al.,Low Temperature Conductivity in Plasma Deposited Amorphous Dielectric Films, IEEE, 1992, pp. 77-81.
M. T. Kim et al.,Characterization of Amorphous SiC:H Films Deposited from Hexamethyldisilazane, Thin Solid Films 303, 1997, pp. 173-179.
R. González-Luna et al.,Deposition of Silicon Oxinitride Films from Hexamethyldisilizane (HMDS) by PECVD, Thin Solid Films 317, 1998, pp. 347-350.
Min Tae Kim,Deposition Kinetics of Silicon Dioxide from Hexamethyldisilazane and Oxygen by PECVDThin Solid Films 347, 1999, pp. 99-105.
Dong-Hau Kuo et al.,Thick SiO, Films Obtained by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane, Carbon Dioxide and Hydrogen, J. Electrochem. Soc. 147(7), 2000, pp. 2679-2684.
Taguchi et al.,Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source, Jap. Journal of Appl. Physics, 43(2A), 2004, pp. L148-L150.
Fainer et al., Synthesis of nanocrystalline silicon carbontride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia; Journal fo Crystal Growth 248, 2003, pp. 175-179.
Smirnova et al., The mechanism of dehydrogenation of SiNx:H films; Thin Solid Films 293, 1997, pp. 6-10.
Bielinski et al., Mechanical and tribological properties of thin remote microwave plasma CVD a-Si:N:C films from a single-source precursor; Tribology Letters, vol. 13, No. 2, Aug. 2002, pp. 71-76.
Fainer et al., The investigation of properties of silicon nitride films obtained by RPECVD from hexamethyldisilazane; Applied Surface Science 113/114, 1997, pp. 614-617.
European Patent Office, Search Report included with Invitation to PAy Additional Fees, Feb. 28, 2006, 7 pgs.
Gurley Lynne A.
Tokyo Electron Limited
Wood Herron & Evans LLP
LandOfFree
Low-temperature plasma-enhanced chemical vapor deposition of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low-temperature plasma-enhanced chemical vapor deposition of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-temperature plasma-enhanced chemical vapor deposition of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3717481