Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-04-04
2006-04-04
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S705000, C257S706000, C257S750000, C438S627000, C438S628000, C361S701000, C361S702000, C361S709000
Reexamination Certificate
active
07023089
ABSTRACT:
Some embodiments disclose a low temperature semiconductor packaging apparatus and method. An apparatus generally comprises a heat spreader, a silicon die, and a thermal interface material disposed between the heat spreader and the silicon die comprising a plurality of metals capable of forming a transient liquid phase bond. A method generally comprises attaching a silicon die to a substrate, depositing a thermal interface material on at least one of the silicon die and a heat spreader, and attaching the heat spreader to the silicon die, wherein the thermal interface material comprises a plurality of metals capable of forming a transient liquid phase bond. Other embodiments are also described and claimed.
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Briski John M.
Clark Jasmine
Intel Corporation
Troutman Sanders LLP
Yancey, Jr. James Hunt
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