Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-08-23
2005-08-23
Baumeister, Bradley (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S199000, C438S216000, C438S275000, C438S308000, C438S694000, C438S287000, C438S585000, C385S129000
Reexamination Certificate
active
06933218
ABSTRACT:
An OXO-type inter-poly insulator (where X is a high-K metal oxide and O is an insulative oxide) is defined by forming an amorphous metal oxide layer on a silicon-based insulator (e.g., a silicon oxide layer) and then nitridating at least upper and lower sub-layers of the amorphous metal oxide with a low temperature plasma treatment that maintains temperature below the recrystallization temperature of the amorphous material. Such a plasma treatment has been found to improve breakdown voltage characteristics of the insulator. In one embodiment, the metal oxide includes aluminum oxide and it is fluorinated with low temperature plasma prior to nitridation.
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Haselden Barbara
Lee Tai-Peng
Baumeister Bradley
Gimlan Gideon
MacPherson Kwok & Chen & Heid LLP
Mosel Vitelic Inc.
Yevsikov Victor V.
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