Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Karlsen, Ernest (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S287000, C438S591000
Reexamination Certificate
active
06900122
ABSTRACT:
A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality and ultra-thin equivalent oxide thickness as compared to conventional SiO2gate oxides are provided. The Pr gate oxide is thermodynamically stable so that the oxide reacts minimally with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit a Pr layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.
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Ahn Kie Y.
Forbes Leonard
Karlsen Ernest
Micro)n Technology, Inc.
Sarkar Asok Kumar
Schwegman Lundberg Woessner & Kluth P.A.
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