Low-temperature formation of polycrystalline semiconductor...

Details Low-temperature formation of polycrystalline semiconductor... Low-temperature formation of polycrystalline semiconductor...

2009-12-31

2011-10-25

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S487000, C438S488000, C257SE21133, C257SE21134, C257SE21135

Reexamination Certificate

active

08043943

ABSTRACT:
A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50° C. in comparison to the use of the metal layer without the small percentage of semiconductor material. During a low temperature isothermal annealing process adjacent Al-2% Si and a-Si films undergo a layer exchange resulting in formation of a continuous polycrystalline silicon film having good physical and electrical properties. Formation of polycrystalline-semiconductor in this manner is suitable for use with low temperature substrates (e.g., glass, plastic) as well as with numerous integrated circuit and MEMs fabrication devices and practices.

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Canali et al. (“Solid-phase epitaxial growth of Si through palladium silicide layers”, J. of Applied Physics, vol. 46, No. 7, pp. 2831-2836, 1975).
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Tu (“Selective growth of metal-rich silicide of near-noble metal”, App. Phys. Letters, vol. 27, No. 4, pp. 221-224).

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