Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-09
2011-10-18
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21655, C257SE21657, C257SE21659
Reexamination Certificate
active
08039896
ABSTRACT:
In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a semiconductor substrate including a plurality of pillars arranged spaced apart from one another, and each of the pillars includes a body portion and a pair of pillar portions extending from the body portion and spaced apart from each other. A gate electrode is formed to surround each of the pillar portions. A bitline is disposed on the body portion to penetrate a region between a pair of the pillar portions of each of the first pillars arranged to extend in a first direction. A wordline is disposed over the bitline, arranged to extend in a second direction intersecting the first direction, and configured to contact the side surface of the gate electrode. A first doped region is formed in the upper surface of each of the pillar portions of the pillar. A second doped region is formed on the body portion of the pillar and connected electrically to the bitline. Storage node electrodes are connected electrically to the first doped region and disposed on each of the pillar portions.
REFERENCES:
patent: 5828094 (1998-10-01), Lee
patent: 5885864 (1999-03-01), Ma
patent: 5929477 (1999-07-01), McAllister Burns, Jr. et al.
patent: 5990509 (1999-11-01), Burns et al.
patent: 6034389 (2000-03-01), Burns, Jr. et al.
patent: 6077745 (2000-06-01), Burns, Jr. et al.
patent: 6114725 (2000-09-01), Furukawa et al.
patent: 6137128 (2000-10-01), Holmes et al.
patent: 6204112 (2001-03-01), Chakravarti et al.
patent: 6218236 (2001-04-01), Economikos et al.
patent: 6440801 (2002-08-01), Furukawa et al.
patent: 7368352 (2008-05-01), Kim et al.
patent: 7482229 (2009-01-01), Juengling
patent: 7531412 (2009-05-01), Yoon et al.
patent: 2004/0041188 (2004-03-01), Bissey et al.
patent: 2007/0145450 (2007-06-01), Wang et al.
patent: 100147584 (1998-05-01), None
patent: 10-2004-0008423 (2004-01-01), None
Kim Bong-soo
Kim Seong-goo
Lee Kang-yoon
Park Dong-gun
Seo Hyeoung-won
Fahmy Wael
Kalam Abul
Onello & Mello LLP
Samsung Electronics Co,. Ltd.
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