Low temperature formation of patterned epitaxial Si...

Details Low temperature formation of patterned epitaxial Si... Low temperature formation of patterned epitaxial Si...

2008-07-29

2008-07-29

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S492000, C257SE21463, C257SE21562

Reexamination Certificate

active

11206059

ABSTRACT:
A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

REFERENCES:
patent: 5158901 (1992-10-01), Kosa et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6812105 (2004-11-01), Dokumaci et al.
patent: 2007/0048956 (2007-03-01), Dip et al.
Wolf, “Silicon Processing for the VLSI ERA”, vol. 1, p. 177-179, Lattice Press, California (1986).

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