Low temperature formation of patterned epitaxial Si...

Details Low temperature formation of patterned epitaxial Si... Low temperature formation of patterned epitaxial Si...

2008-07-29

2008-07-29

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S492000, C257SE21463, C257SE21562

Reexamination Certificate

active

07405140

ABSTRACT:
A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.

REFERENCES:
patent: 5158901 (1992-10-01), Kosa et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6812105 (2004-11-01), Dokumaci et al.
patent: 2007/0048956 (2007-03-01), Dip et al.
Wolf, “Silicon Processing for the VLSI ERA”, vol. 1, p. 177-179, Lattice Press, California (1986).

Affiliated with

Also associated with

Rating

Low temperature formation of patterned epitaxial Si... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature formation of patterned epitaxial Si..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature formation of patterned epitaxial Si... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2779284