Low temperature etchant for treatment of silicon-containing...

Details Low temperature etchant for treatment of silicon-containing... Low temperature etchant for treatment of silicon-containing...

2007-06-26

2007-06-26

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C134S001100, C134S001200, C134S001300

Reexamination Certificate

active

11047323

ABSTRACT:
In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 Å/min). The silicon-containing surface is exposed to an etching gas that contains an etchant, a silicon source and a carrier gas. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during etching or smoothing processes. In another embodiment of the invention, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. The silicon-containing surface is exposed to an etching gas that contains an etchant, preferably chlorine, a carrier gas and an optional silicon source.

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