Low temperature dry etch of copper

Details Low temperature dry etch of copper Low temperature dry etch of copper

1993-09-24

1994-08-09

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156666, H01L 2100, H01L 2102, B44C 122, C25F 300

Patent

active

053363639

ABSTRACT:
Copper lines can be formed on a semiconductor wafer at low temperatures by forming a patterned photoresist layer over a copper layer, and etching the copper in a vacuum etch chamber using vaporized acetic acid and water as the etchants.

REFERENCES:
patent: 3772100 (1973-11-01), Masuda et al.
patent: 4689113 (1987-08-01), Balasubramanyam et al.
patent: 4734156 (1988-03-01), Iwasa
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4951601 (1990-08-01), Maydan et al.

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