Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-09-30
2010-12-14
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S789000, C438S790000, C257SE21278, C257SE21279, C427S255280, C427S255370, C427S255290, C427S569000
Reexamination Certificate
active
07851385
ABSTRACT:
The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.
REFERENCES:
patent: 4892753 (1990-01-01), Wang et al.
patent: 5151028 (1992-09-01), Snead
patent: 6232166 (2001-05-01), Ju et al.
patent: 6329717 (2001-12-01), Jang et al.
patent: 6653189 (2003-11-01), Haddad et al.
patent: 6949796 (2005-09-01), Ellis-Monaghan et al.
patent: 7253123 (2007-08-01), Arghavani et al.
patent: 2001/0049183 (2001-12-01), Henson et al.
patent: 2003/0161951 (2003-08-01), Yuan et al.
patent: 2005/0118837 (2005-06-01), Todd et al.
patent: 2005/0167732 (2005-08-01), Iguchi et al.
patent: 2005/0233522 (2005-10-01), Iguchi et al.
patent: 2005/0233524 (2005-10-01), Lee
patent: 2006/0154493 (2006-07-01), Arghavani et al.
patent: 2007/0042544 (2007-02-01), Wu et al.
patent: 2007/0126046 (2007-06-01), Takeuchi
patent: 2007/0166919 (2007-07-01), Iguchi et al.
patent: 2007/0232071 (2007-10-01), Balseanu et al.
patent: 2007/0232082 (2007-10-01), Balseanu et al.
patent: 2008/0083944 (2008-04-01), Buh et al.
PCT International Search Report and Written Opinion dated Dec. 16, 2008 for International Application No. PCT/US2008/78162. (APPM/012186 PCT P).
Agustin Melody
Arghavani Reza
Shek Meiyee (Maggie Le)
Spuller Matthew
Xia Li-Qun
Applied Materials Inc.
Dehne Aaron A
Nguyen Ha Tran T
Patterson & Sheridan LLP
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