Low temperature anisotropic ashing of resist for semiconductor f

Details Low temperature anisotropic ashing of resist for semiconductor f Low temperature anisotropic ashing of resist for semiconductor f

1994-05-16

1995-09-26

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 2100

Patent

active

054531578

ABSTRACT:
This invention encompasses using anisotropic plasma at a low temperature to strip resist from a semiconductor wafer. A semiconductor wafer 10 is placed in a reactor 26 which contains an oxygen plasma source 28. The oxygen plasma source 28 emits oxygen plasma 32 which is drawn towards the biased wafer 10, exposing the resist layer 22 of the wafer to anisotropic oxygen plasma. A sensor 30 detects when the ashing of the resist is complete, and then the plasma source is turned off.
Advantages of the invention include the ability to remove resist from wafers without damaging polymeric dielectric layers, which are sensitive to the harsh effects of traditional resist removal methods. With the present invention, very little damage occurs to the material on the sidewalls of vias.

REFERENCES:
patent: 4464460 (1984-08-01), Hiraoka et al.
patent: 5312717 (1994-05-01), Sachder et al.
"Electron Cyclotron Resonance Plasma Etching of Photoresist at Cryogenic Temperatures", J. Appl. Phys., vol. 72, No. 7, pp. 3050-3057; Oct.-1992-Varhue et al.

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