Low temperature ALD SiO 2

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S569000, C427S255290

Reexamination Certificate

active

07897208

ABSTRACT:
The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.

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