Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-08-09
2011-08-09
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21120, C257S305000
Reexamination Certificate
active
07994073
ABSTRACT:
A low stress sacrificial cap layer120having a silicon oxide liner film130, a low stress silicon film140, and a silicon nitride film. Alternatively, a low stress sacrificial cap layer410having a silicon oxide liner film130and a graded silicon nitride film420. Also, methods300, 500for fabricating a transistor20, 400having a low stress sacrificial cap layer120, 410.
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Chakravarthi Srinivasan
Chidambaram Periannan
Lu Jiong-Ping
Brady III Wade J.
Dickey Thomas L
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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