Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-09-28
2011-11-08
Estrada, Michelle (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S221000, C438S710000, C438S725000, C438S781000, C257SE21587, C257SE21632
Reexamination Certificate
active
08053377
ABSTRACT:
System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.
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Cheng Chun-Ren
Lee Jiou-Kang
Peng Jung-Huei
Tsai Shang-Ying
Wu Ting-Hau
Estrada Michelle
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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