Low stress photo-sensitive resin with sponge-like structure...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S221000, C438S710000, C438S725000, C438S781000, C257SE21587, C257SE21632

Reexamination Certificate

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08053377

ABSTRACT:
System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.

REFERENCES:
patent: 6287979 (2001-09-01), Zhou et al.
patent: 7575821 (2009-08-01), Wei et al.
patent: 7998861 (2011-08-01), Lee et al.
patent: 2004/0036076 (2004-02-01), Arita et al.
patent: 2004/0187292 (2004-09-01), Miller et al.
patent: 2009/0075361 (2009-03-01), DeLouise et al.
patent: 2009/0166817 (2009-07-01), Tsai et al.

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