Low resistance T-gate MOSFET device using a damascene gate...

Details Low resistance T-gate MOSFET device using a damascene gate... Low resistance T-gate MOSFET device using a damascene gate...

2007-02-13

2007-02-13

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S385000, C257SE21205, C257SE21222, C257SE29135

Reexamination Certificate

active

10659949

ABSTRACT:
The present invention provides a method for fabricating low-resistance, sub-0.1 μm channel T-gate MOSFETs that do not exhibit any poly depletion problems. The inventive method employs a damascene-gate processing step and a chemical oxide removal etch to fabricate such MOSFETs. The chemical oxide removal may be performed in a vapor containing HF and NH3or a plasma containing HF and NH3.

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