Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-09-01
2009-10-20
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S233000, C438S256000, C438S655000, C438S656000, C438S657000
Reexamination Certificate
active
07605033
ABSTRACT:
Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided. In some embodiments, the method includes forming a metallized contact to an active area in a silicon substrate in a peripheral circuitry area and a metallized contact to a polysilicon plug in a memory cell array area by forming a first opening to expose the active area at the peripheral circuitry area, chemical vapor depositing a titanium layer over the dielectric layer and into the first opening to form a titanium silicide layer over the active area in the silicon substrate, removing the titanium layer selective to the titanium silicide layer, forming a second opening in the dielectric layer to expose the polysilicon plug at the memory cell array area, and forming metal contacts within the first and second openings to the active area and the exposed polysilicon plug.
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Fishburn Fred
McDaniel Terrence
Tagg Sandra
Micro)n Technology, Inc.
Thomas Toniae M
Whyte Hirschboeck Dudek SC
Wilczewski M.
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