Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-29
2010-10-05
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C438S677000, C257S333000, C257S409000, C257SE21410
Reexamination Certificate
active
07807536
ABSTRACT:
A trench gate field effect transistor is formed as follows. A trench is formed in a semiconductor region, followed by a dielectric layer lining sidewalls and bottom of the trench and extending over mesa regions adjacent the trench. A conductive seed layer is formed in a bottom portion of the trench over the dielectric layer. A low resistance material is grown over the conductive seed layer, wherein the low resistance material is selective to the conductive seed layer.
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Ho Ihsiu
Naylor Kent
Session Fred
Sreekantham Sreevatsa
Fairchild Semiconductor Corporation
Thomas Toniae M
Townsend and Townsend / and Crew LLP
Wilczewski Mary
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