Low-resistance contact to silicon having a titanium silicide...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S643000, C438S648000, C438S653000, C438S656000, C438S681000

Reexamination Certificate

active

06903010

ABSTRACT:
A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

REFERENCES:
patent: 3637320 (1972-01-01), Wakefield et al.
patent: 3807008 (1974-04-01), Reedy
patent: 4035541 (1977-07-01), Smith et al.
patent: 4497874 (1985-02-01), Hale
patent: 4725877 (1988-02-01), Brasen et al.
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4830886 (1989-05-01), Co et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4990997 (1991-02-01), Nishida
patent: 4998151 (1991-03-01), Korman et al.
patent: 5001531 (1991-03-01), Yamaguchi
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5087593 (1992-02-01), Narula
patent: 5132756 (1992-07-01), Matsuda
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5178911 (1993-01-01), Gordon et al.
patent: 5192589 (1993-03-01), Sandhu
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5384289 (1995-01-01), Westmoreland
patent: 5496762 (1996-03-01), Sandhu et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5571572 (1996-11-01), Sandhu
patent: 5723382 (1998-03-01), Sandhu et al.
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5770520 (1998-06-01), Zhao et al.
patent: 5893758 (1999-04-01), Sandhu et al.
patent: 6081034 (2000-06-01), Sandhu et al.
patent: 6187673 (2001-02-01), Lai et al.
patent: 6261935 (2001-07-01), See et al.
patent: 6271136 (2001-08-01), Shue et al.
patent: 6281101 (2001-08-01), Iyer
patent: 6291340 (2001-09-01), Sandhu et al.
patent: 4-38875 (1992-02-01), None
patent: 4-87328 (1992-06-01), None
patent: WO 86/01640 (1986-03-01), None
Wakefield et al., “Preparation of Titanium Carbonitride From Mono-, Di-, and Tri-Methyl Amines”; 4thInternational Conference on CVD, Electrochemical Society, 1973, pp. 173-150.
Politis et al., “Preparation, Characterization and Superconducting Properties of TiN and TiCxNy Single Crystals Prepared By CVD”; 7thInternational Conference on CVD, Electrochemical Society, 1979, pp. 289-299.
Raaijmakers et al., “Contact Hole Fill with Low Temperature LPCVD TiN”, VMIC Conference Jun. 12-Jun. 13, 1990, pp. 219-225.
Katz et al., “Properties of Titanium Nitride Thin Films Deposited by Rapid-Thermal-Low-Pressure-Metalorganic-Chemical-Vapor-Deposition Technique Using Tetrakis (Dimethylamido) Titanium Precursor”, J. Appl. Phys. 70(7), Oct. 1991, pp. 3666-3677.
Eizenberg et al., “TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices”, Appl. Phys. Lett. 65 (19), Nov. 7, 1994, pp. 2416-2418.

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