Low profile side emitting LED

Details Low profile side emitting LED Low profile side emitting LED

2006-06-09

2009-12-01

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257SE31127, C385S004000, C362S610000, C362S612000

Reexamination Certificate

active

07626210

ABSTRACT:
Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.

REFERENCES:
patent: 2004/0028095 (2004-02-01), Ishida et al.
patent: 2004/0065886 (2004-04-01), Eliashevich et al.
patent: 2004/0217362 (2004-11-01), Slater et al.

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