Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-10-24
2006-10-24
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S204000, C365S205000
Reexamination Certificate
active
07126866
ABSTRACT:
In a ROM structure, power consumption is reduced by providing for pre-discharging of only the bit line corresponding to the memory location that is being read. Column select lines are coupled to logic to switch in a pre-discharging circuit prior to reading, and to disconnect, from the pre-discharging circuit during reading, only the bit line corresponding to the memory location being read.
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Franklin Andrew J.
Ho Ernes
Lin Hengyang
Poplevine Pavel
Hoang Huan
National Semiconductor Corporation
Vollrath Jurgen
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