Static information storage and retrieval – Read/write circuit – Precharge
Patent
1996-12-17
1998-04-28
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Precharge
365205, 365207, G11C 700
Patent
active
057454230
ABSTRACT:
A low power precharge circuit for a dynamic random access memory (DRAM) is disclosed. The present invention includes an equalization circuit connected to a pair of bitlines for allowing electric charge of the bitline having higher voltage to flow to the bitline having lower voltage after being activated by a precharge control signal. A voltage pull circuit is used to provide a constant voltage in response to a first sense control signal. Further, a voltage amplifying circuit connected to the pair of bitlines is used to amplify the voltages of the bitlines in response to a second sense control signal so that the voltage of one bitline is complementary to the voltage of the other bitline.
REFERENCES:
patent: 5426603 (1995-06-01), Nakamura et al.
patent: 5463584 (1995-10-01), Hoshino
patent: 5544110 (1996-08-01), Yuh
patent: 5646880 (1997-07-01), Yuh
Ho Hoai V.
Nelms David C.
Powerchip Semiconductor Corp.
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