Low-power multiple-channel fully depleted quantum well CMOSFETs

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate

Reexamination Certificate

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C438S300000

Reexamination Certificate

active

07074657

ABSTRACT:
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.

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“New FET on SOI Structure”, IBM Technical Disclosure Bulletin, IBM Corp, New York, Sep. 1, 1991, vol. 34, No. 4A, p. 369.

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