Low power flash memory devices

Details Low power flash memory devices Low power flash memory devices

2008-05-13

2008-05-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S378000, C257SE29129, C257SE29300, C257SE21422, C257SE21680

Reexamination Certificate

active

11154462

ABSTRACT:
A buried bipolar junction is provided in a floating gate transistor flash memory device. During a write operation electrons are injected into a surface depletion region of the memory cell transistors. These electrons are accelerated in a vertical electric field and injected over a barrier to a floating gate of the cells.

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