Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-30
2009-06-16
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S261000, C438S265000, C438S694000, C257S315000, C257S316000, C257S324000, C257SE21170, C257SE21680, C365S185180
Reexamination Certificate
active
07547601
ABSTRACT:
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system, arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter, arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface, arranging a first region spaced from the second conductor, arranging a channel of the body between the first region and the second conductor, arranging a second insulator adjacent to the first region, arranging a charge storage region between the first and the second insulators, arranging a first portion of a word-line adjacent to and insulated from the charge storage region, and arranging a second portion of the word-line adjacent to and insulated from the body.
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Nguyen Dao H
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