Low power consumption MIS semiconductor device

Details Low power consumption MIS semiconductor device Low power consumption MIS semiconductor device

2011-04-19

2011-04-19

Chang, Daniel D (Department: 2819)

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Signal level or switching threshold stabilization

C326S033000, C327S544000

Reexamination Certificate

active

07928759

ABSTRACT:
A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.

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Japanese Office Action dated Nov. 27, 2007 with English-language translation.

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