Low oxygen content photoresist stripping process for low...

Details Low oxygen content photoresist stripping process for low... Low oxygen content photoresist stripping process for low...

2006-04-18

2006-04-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S475000, C438S513000

Reexamination Certificate

active

07029992

ABSTRACT:
A plasma containing 5–10% oxygen and 90–95% of an inert gas strips photoresist from over a low-k dielectric material formed on or in a semiconductor device. The inert gas may be nitrogen, hydrogen, or a combination thereof, or it may include at least one of nitrogen, hydrogen, NH3, Ar, He, and CF4. The operating pressure of the plasma may range from 1 millitorr to 150 millitor. The plasma removes photoresist, the hard skin formed on photoresist during aggressive etch processes, and polymeric depositions formed during etch processes. The plasma strips photoresist at a rate sufficiently high for production use and does not appreciably attack carbon-containing low-k dielectric materials. An apparatus including a plasma tool containing a semiconductor substrate and the low oxygen-content plasma, is also provided.

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