Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1996-07-05
1998-01-13
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
36518909, 36518907, 36518911, 365207, 3651852, 36518523, 36518526, G11C 700
Patent
active
057086168
ABSTRACT:
An integrated circuit memory device includes a pair of bit lines, a memory cell connected to one of the bit lines, a sense amplifier connected between the bit lines, and a sense amplifier control circuit. The sense amplifier control circuit generates a sense amplifier drive signal on a sense amplifier drive node responsive to an enable signal. The sense amplifier control circuit includes a comparison circuit, a drive circuit, and a driver. The comparison circuit generates a comparison signal in response to a comparison of the sense amplifier drive signal and a predetermined reference signal, and in response to the enable signal. The drive circuit generates a gating signal in response to the comparison signal and in response to a magnitude of the sense amplifier drive signal so that the gating signal has a first magnitude when the sense amplifier drive signal is below a predetermined threshold and a second magnitude when the sense amplifier drive signal is above the predetermined threshold. The driver provides electrical energy to the sense amplifier drive node responsive to the gating signal so that electrical energy is provided at a first rate when the gating signal has the first magnitude, and electrical energy is provided at a second rate when the gating signal has the second magnitude thereby generating the sense amplifier drive signal. The sense amplifier is connected between the pair of bit lines, and detects and amplifies a difference between voltages of the bit lines responsive to the sense amplifier drive signal on the sense amplifier drive node. Related methods are also discussed.
REFERENCES:
patent: 5301261 (1994-04-01), Furutani et al.
patent: 5315550 (1994-05-01), Tobita
patent: 5521878 (1996-05-01), Ohtani et al.
patent: 5544121 (1996-08-01), Dosaka et al.
Nguyen Viet Q.
Samsung Electronics Co,. Ltd.
LandOfFree
Low noise sense amplifier control circuits for dynamic random ac does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low noise sense amplifier control circuits for dynamic random ac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low noise sense amplifier control circuits for dynamic random ac will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-331668