Low modulus stress buffer coating in microelectronic devices

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE21507, C257S700000, C257S754000, C257S756000

Reexamination Certificate

active

07635919

ABSTRACT:
A method for protecting an electronic component including a semiconductor chip with a first elastic modulus includes steps as follows. At least one application of a first protective substance is applied on an outer surface of the semiconductor chip. The first protective substance has a second elastic modulus. A second substance is applied to an outer surface of the first protective substance. The second substance has a third elastic modulus. The second elastic modulus is substantially lower than the first elastic modulus and the third elastic modulus, and the first protective substance protects the semiconductor chip from damage during the application of the second substance and/or during the life of the semiconductor chip.

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