Low-melting point glass sealed semiconductor device and method o

Details Low-melting point glass sealed semiconductor device and method o Low-melting point glass sealed semiconductor device and method o

1992-10-30

1993-08-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257787, 257729, H01L 2328, H01L 2330

Patent

active

052372065

ABSTRACT:
A low-melting point glass sealed semiconductor device comprises a pair of ceramic substrates, each of which is shaped like an arch. The ceramic substrates are overlaid with each other, in such a manner as to define a space between them. Through this space, a gas generated from a thermosetting mounting agent used for adhesion is guided to the outside of the semiconductor device.

REFERENCES:
patent: 4445274 (1984-05-01), Suzuki et al.
patent: 4818821 (1989-04-01), Wentworth et al.
patent: 4931854 (1990-06-01), Yonemasu et al.
patent: 4954874 (1990-09-01), Miura
"Mechanical Properties of Liquid-Phase-Bonded Copper-Ceramic Substrates", Mar. 1982, M. Wittmer, C. R. Boer, and P. Gudmundson, Journal American Ceramic Soc. vol. 65, No. 3.

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