Low-leakage transistor and manufacturing method thereof

Details Low-leakage transistor and manufacturing method thereof Low-leakage transistor and manufacturing method thereof

2005-08-29

2009-06-23

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S294000, C438S295000, C438S296000, C438S297000, C438S369000, C438S370000, C438S371000, C438S372000, C438S373000, C438S374000, C438S375000, C438S376000, C438S377000, C438S433000, C438S449000, C438S450000, C438S451000, C438S524000, C438S525000, C438S526000, C438S527000, C438S528000, C438S529000, C438S530000, C438S531000, C438S532000

Reexamination Certificate

active

07550355

ABSTRACT:
A boron ion stream may be used to implant ions, such as boron ions, into the sidewalls of an active area, such as an NFET active area. The boron ion stream has both vertical tilt and horizontal rotation components relative to the sidewalls and/or the silicon device, to provide a better line of sight onto the sidewalls. This may allow components of the silicon device to be moved closer together without unduly reducing the effectiveness of boron doping of NFET active area sidewalls, and provides an improved line of sight of a boron ion stream onto the sidewalls of an NFET active area prior to filling the surrounding trench with STI material.

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patent: 7098067 (2006-08-01), Adkisson et al.
patent: 2003-229577 (2003-08-01), None

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