Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-31
2008-10-14
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S381000, C438S396000, C257SE21008
Reexamination Certificate
active
07435641
ABSTRACT:
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
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“High Dielectric Constant Materials for DRAMs: Tantalum Oxide”,Time Domain CVD, Chart Listing Dielectric Constants of SiO2, Si3N4, Ta2O5, BST, http://www.timedomaincvd.com/CVD—fundamentals/films/—Ta2O5,.html, Dec. 2005, 3 pages.
Dierks, S
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Tsai H. Jey
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