Low leakage metal-containing cap process using oxidation

Details Low leakage metal-containing cap process using oxidation Low leakage metal-containing cap process using oxidation

2011-01-11

2011-01-11

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23145

Reexamination Certificate

active

07867897

ABSTRACT:
An interconnect structure which includes a metal-containing cap located atop each conductive feature that is present within a dielectric material is provided in which a surface region of the metal-containing cap is oxidized prior to the subsequent deposition of any other dielectric material thereon. Moreover, metal particles that are located on the surface of the dielectric material between the conductive features are also oxidized at the same time as the surface region of the metal-containing cap. This provides a structure having a reduced leakage current. In accordance with the present invention, the oxidation step is performed after electroless plating of the metal-containing cap and prior to the deposition of a dielectric capping layer or an overlying interlayer or intralevel dielectric material.

REFERENCES:
patent: 4231813 (1980-11-01), Carlin
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6180505 (2001-01-01), Uzoh
patent: 6274935 (2001-08-01), Uzoh
patent: 6531777 (2003-03-01), Woo et al.
patent: 6821909 (2004-11-01), Ramanathan et al.
patent: 2005/0089796 (2005-04-01), Funatsu et al.
patent: 2005/0158656 (2005-07-01), Takemoto et al.
patent: 2005/0170650 (2005-08-01), Fang et al.
patent: 2005/0181226 (2005-08-01), Weidman et al.
patent: 2006/0175708 (2006-08-01), Ueno
Ko, T. et al. “High Performance/Reliability Cu Interconnect with Selective CoWP Cap.” 2003 Symp. VLSI Tech. Dig. Tec. Pap. p. 109.
Kohn, A. et al. “Characterization of Electroless Deposited Co(W,P) Thin Films for Encapsulation of Copper Metallization” Mater. Sci. Eng. A, 2001, 302, 18.
Hu, C.-K et al. “Reduced Cu Interface Diffusion by CoWP Surface Coating.” Microelec. Eng, 2003, 70, 406.
Gambino, J. et al. “Thermal Oxidation of Cu Interconnects Capped with CoWP.” Materials, Technology, and Reliability of Advanced Interconnects-2005, MRS Proc., 2005, vol. 863, p. 227.
Gosset, L.G. et al. “Interest and Characterization of a Hybrid CoWP/SiCN Architecture for sub-65nm Technology Nodes”.
Decorps et al., Electroless Deposition of CoWP: Material Characterization and Process Optimization on 300mm Wafers, Microelectronic Engineering, 2006, vol. 83, Issues 11-12, pp. 2082-2087.

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