Low k ILD layer with a hydrophilic portion

Details Low k ILD layer with a hydrophilic portion Low k ILD layer with a hydrophilic portion

2007-07-10

2007-07-10

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S628000, C438S783000, C257SE29111, C257SE21489

Reexamination Certificate

active

10944358

ABSTRACT:
Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si—C and C—C bonds but not enough to break Si—O bonds.

REFERENCES:
patent: 6383913 (2002-05-01), Tsai et al.
patent: 2003/0054115 (2003-03-01), Albano et al.
patent: 2003/0089992 (2003-05-01), Rathi et al.
patent: 2005/0042388 (2005-02-01), Mitsuoka et al.
Ronald C. Hedden et al., “Comparison of Curing Processes for Porous Dielectrics Measurements from Specular X-Ray Reflectivity”, Journal of the Electrochemical Society, 151 (8) F178-F181 (2004).
Carlo Waldfried et al., “Single Wafer Rapid Curing™ of Porous Low-k Materials”, IEEE, pp. 226-228.

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